Show Hamamatsu Avalanche Photo Diode 3407036914
This is all the information about APD 3407036914. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
3407036914 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
D02 |
Break-through voltage: |
416 V |
Voltage for Gain 100 (T=+25°C): |
386.8 V |
Dark current: |
6.5 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
414 |
Position in Box: |
8 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10648 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 386.5839422 V T = -25 °C: 350.678052 V |
Voltage for Gain 150: |
T = +20 °C: 394.5625597 V T = -25 °C: 358.2486902 V |
Voltage for Gain 200: |
T = +20 °C: 398.9826119 V T = -25 °C: 362.5045976 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.346014897 V-1 T = -25 °C: 4.569688603 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.166846786 V-1 T = -25 °C: 9.02688004 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.2809273 V-1 T = -25 °C: 15.8649367 V-1 |
Break-through voltage: |
T = +20 °C: 415.2161679 V T = -25 °C: 378.6365616 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history