Show Hamamatsu Avalanche Photo Diode 3315036372
This is all the information about APD 3315036372. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3315036372 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E04 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
378.3 V |
| Dark current: |
32.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
155 |
| Position in Box: |
27 |
| EP1 batch: |
184 |
| EP1 batch after irradiation: |
10423 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.2559431 V T = -25 °C: 344.0029749 V |
| Voltage for Gain 150: |
T = +20 °C: 385.9641759 V T = -25 °C: 351.1653129 V |
| Voltage for Gain 200: |
T = +20 °C: 390.3046049 V T = -25 °C: 355.1998329 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.573149929 V-1 T = -25 °C: 5.083712568 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.041519739 V-1 T = -25 °C: 9.561829266 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.03028575 V-1 T = -25 °C: 15.23482081 V-1 |
| Break-through voltage: |
T = +20 °C: 405.8556672 V T = -25 °C: 370.1729177 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
