Show Hamamatsu Avalanche Photo Diode 3315036351
This is all the information about APD 3315036351. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3315036351 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E10 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
379.7 V |
| Dark current: |
20 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
155 |
| Position in Box: |
8 |
| EP1 batch: |
183 |
| EP1 batch after irradiation: |
10422 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.6562413 V T = -25 °C: 345.4822858 V |
| Voltage for Gain 150: |
T = +20 °C: 387.3201719 V T = -25 °C: 352.5952708 V |
| Voltage for Gain 200: |
T = +20 °C: 391.5989989 V T = -25 °C: 356.5829802 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.827146899 V-1 T = -25 °C: 4.880688418 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.799736243 V-1 T = -25 °C: 10.13770942 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.19180506 V-1 T = -25 °C: 16.38921166 V-1 |
| Break-through voltage: |
T = +20 °C: 406.280099 V T = -25 °C: 370.7091848 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
