Show Hamamatsu Avalanche Photo Diode 3313036234
This is all the information about APD 3313036234. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3313036234 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A07 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
384 V |
| Dark current: |
23.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
153 |
| Position in Box: |
26 |
| EP1 batch: |
181 |
| EP1 batch after irradiation: |
10420 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.6490848 V T = -25 °C: 348.9446997 V |
| Voltage for Gain 150: |
T = +20 °C: 391.4424374 V T = -25 °C: 356.213803 V |
| Voltage for Gain 200: |
T = +20 °C: 395.7832172 V T = -25 °C: 360.2990886 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.43058277 V-1 T = -25 °C: 5.026465996 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.622330756 V-1 T = -25 °C: 9.394256678 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.9762869 V-1 T = -25 °C: 14.92066003 V-1 |
| Break-through voltage: |
T = +20 °C: 410.2054192 V T = -25 °C: 374.6918835 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
