Show Hamamatsu Avalanche Photo Diode 3312036139
This is all the information about APD 3312036139. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
3312036139 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C08 |
Break-through voltage: |
408 V |
Voltage for Gain 100 (T=+25°C): |
379.9 V |
Dark current: |
25 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
152 |
Position in Box: |
6 |
EP1 batch: |
178 |
EP1 batch after irradiation: |
10418 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 380.7332605 V T = -25 °C: 346.0926464 V |
Voltage for Gain 150: |
T = +20 °C: 388.3972802 V T = -25 °C: 353.2331912 V |
Voltage for Gain 200: |
T = +20 °C: 392.6836992 V T = -25 °C: 357.2331182 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.47803778 V-1 T = -25 °C: 5.095278934 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.912753275 V-1 T = -25 °C: 9.702968736 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.83071656 V-1 T = -25 °C: 15.68112563 V-1 |
Break-through voltage: |
T = +20 °C: 406.8374195 V T = -25 °C: 371.0352469 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history