Show Hamamatsu Avalanche Photo Diode 3311036055
This is all the information about APD 3311036055. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
3311036055 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D08 |
Break-through voltage: |
404 V |
Voltage for Gain 100 (T=+25°C): |
376.4 V |
Dark current: |
12.8 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
150 |
Position in Box: |
50 |
EP1 batch: |
177 |
EP1 batch after irradiation: |
10416 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 376.9630437 V T = -25 °C: 342.8436238 V |
Voltage for Gain 150: |
T = +20 °C: 384.6113035 V T = -25 °C: 349.9013782 V |
Voltage for Gain 200: |
T = +20 °C: 388.8746099 V T = -25 °C: 353.8555027 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.774224228 V-1 T = -25 °C: 5.24561874 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.689548442 V-1 T = -25 °C: 10.09824834 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.16577166 V-1 T = -25 °C: 16.40640985 V-1 |
Break-through voltage: |
T = +20 °C: 403.8977338 V T = -25 °C: 368.2444631 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history