Show Hamamatsu Avalanche Photo Diode 3310035983
This is all the information about APD 3310035983. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3310035983 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E09 |
| Break-through voltage: |
406 V |
| Voltage for Gain 100 (T=+25°C): |
377.5 V |
| Dark current: |
21.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
149 |
| Position in Box: |
39 |
| EP1 batch: |
175 |
| EP1 batch after irradiation: |
10414 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 377.4552659 V T = -25 °C: 343.1277291 V |
| Voltage for Gain 150: |
T = +20 °C: 385.1154382 V T = -25 °C: 350.2430952 V |
| Voltage for Gain 200: |
T = +20 °C: 389.4185402 V T = -25 °C: 354.2426253 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.581518816 V-1 T = -25 °C: 5.069986668 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.036790182 V-1 T = -25 °C: 9.564054905 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.82632094 V-1 T = -25 °C: 15.29400982 V-1 |
| Break-through voltage: |
T = +20 °C: 404.986449 V T = -25 °C: 369.11261 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
