Show Hamamatsu Avalanche Photo Diode 0807007719
This is all the information about APD 0807007719. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0807007719 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2420027488/0807007719 |
| Unit: |
#1818 (barcode 1309018574) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E04 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
380.2 V |
| Dark current: |
2.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
298 |
| Position in Box: |
6 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10364 |
| |
|
| Shipment: |
|
| Grid number: |
91 |
| Position in grid: |
9 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
16. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
380.2 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 380.2197112 V T = -25 °C: 344.7887852 V |
| Voltage for Gain 150: |
T = +20 °C: 388.1000948 V T = -25 °C: 352.1361676 V |
| Voltage for Gain 200: |
T = +20 °C: 392.4874823 V T = -25 °C: 356.2548619 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.517050998 V-1 T = -25 °C: 5.031577745 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.889921941 V-1 T = -25 °C: 9.420925438 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.5795979 V-1 T = -25 °C: 14.83900719 V-1 |
| Break-through voltage: |
T = +20 °C: 408.3602791 V T = -25 °C: 371.9431111 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
