Show Hamamatsu Avalanche Photo Diode 3305035768
This is all the information about APD 3305035768. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
3305035768 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 0924010712/3305035768 |
Unit: |
#2795 (barcode 1309026487) |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
red |
|
|
Manufacturer information: |
|
Wafer position: |
C05 |
Break-through voltage: |
407 V |
Voltage for Gain 100 (T=+25°C): |
378.8 V |
Dark current: |
24.7 nA |
|
|
Screening Logistics: |
|
Available: |
No |
Storage Box: |
147 |
Position in Box: |
6 |
EP1 batch: |
171 |
EP1 batch after irradiation: |
10410 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 379.3793538 V T = -25 °C: 345.8804308 V |
Voltage for Gain 150: |
T = +20 °C: 387.0562424 V T = -25 °C: 353.0610538 V |
Voltage for Gain 200: |
T = +20 °C: 391.3867949 V T = -25 °C: 357.136414 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.585476195 V-1 T = -25 °C: 4.98675573 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.142598569 V-1 T = -25 °C: 8.959153121 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 16.17367376 V-1 T = -25 °C: 15.36965916 V-1 |
Break-through voltage: |
T = +20 °C: 406.1226091 V T = -25 °C: 371.2521405 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history