Show Hamamatsu Avalanche Photo Diode 3304035713
This is all the information about APD 3304035713. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3304035713 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D05 |
| Break-through voltage: |
412 V |
| Voltage for Gain 100 (T=+25°C): |
385.2 V |
| Dark current: |
28.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
146 |
| Position in Box: |
28 |
| EP1 batch: |
170 |
| EP1 batch after irradiation: |
10409 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 385.3384589 V T = -25 °C: 350.5143749 V |
| Voltage for Gain 150: |
T = +20 °C: 393.0628884 V T = -25 °C: 357.7532887 V |
| Voltage for Gain 200: |
T = +20 °C: 397.3838079 V T = -25 °C: 361.7571549 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.566928755 V-1 T = -25 °C: 4.854095403 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.023939495 V-1 T = -25 °C: 9.791277607 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.02945324 V-1 T = -25 °C: 16.21992884 V-1 |
| Break-through voltage: |
T = +20 °C: 411.1420788 V T = -25 °C: 375.2828981 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
