Show Hamamatsu Avalanche Photo Diode 3303035648
This is all the information about APD 3303035648. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3303035648 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B11 |
| Break-through voltage: |
414 V |
| Voltage for Gain 100 (T=+25°C): |
386.1 V |
| Dark current: |
21.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
145 |
| Position in Box: |
40 |
| EP1 batch: |
169 |
| EP1 batch after irradiation: |
10408 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 386.1598878 V T = -25 °C: 351.2042087 V |
| Voltage for Gain 150: |
T = +20 °C: 393.9114245 V T = -25 °C: 358.4788769 V |
| Voltage for Gain 200: |
T = +20 °C: 398.2229934 V T = -25 °C: 362.5751369 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.615766268 V-1 T = -25 °C: 4.928910177 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.222246324 V-1 T = -25 °C: 9.231756958 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.43025136 V-1 T = -25 °C: 16.50802289 V-1 |
| Break-through voltage: |
T = +20 °C: 413.7785857 V T = -25 °C: 377.8916744 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
