Show Hamamatsu Avalanche Photo Diode 0807007706
This is all the information about APD 0807007706. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0807007706 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0902009130/0807007706 |
| Unit: |
#2652 (barcode 1309025534) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H09 |
| Break-through voltage: |
416 V |
| Voltage for Gain 100 (T=+25°C): |
387.5 V |
| Dark current: |
2.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
297 |
| Position in Box: |
50 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10363 |
| |
|
| Shipment: |
|
| Grid number: |
91 |
| Position in grid: |
10 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
16. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
387.5 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 387.9331508 V T = -25 °C: 352.1684909 V |
| Voltage for Gain 150: |
T = +20 °C: 395.8301946 V T = -25 °C: 359.6726761 V |
| Voltage for Gain 200: |
T = +20 °C: 400.2164905 V T = -25 °C: 363.8799625 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.593582094 V-1 T = -25 °C: 4.78821347 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.096819959 V-1 T = -25 °C: 9.680528005 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.10975767 V-1 T = -25 °C: 15.23721894 V-1 |
| Break-through voltage: |
T = +20 °C: 415.7091628 V T = -25 °C: 379.668074 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
