Show Hamamatsu Avalanche Photo Diode 3215035444
This is all the information about APD 3215035444. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3215035444 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F09 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
383.8 V |
| Dark current: |
29.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
142 |
| Position in Box: |
36 |
| EP1 batch: |
165 |
| EP1 batch after irradiation: |
10348 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.9882233 V T = -25 °C: 347.4140938 V |
| Voltage for Gain 150: |
T = +20 °C: 390.8878025 V T = -25 °C: 354.6930518 V |
| Voltage for Gain 200: |
T = +20 °C: 395.311366 V T = -25 °C: 358.7628137 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.607914609 V-1 T = -25 °C: 4.841620096 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.012133337 V-1 T = -25 °C: 9.950103444 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.81991419 V-1 T = -25 °C: 15.94485452 V-1 |
| Break-through voltage: |
T = +20 °C: 410.8318254 V T = -25 °C: 373.1383036 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
