Show Hamamatsu Avalanche Photo Diode 3208035066
This is all the information about APD 3208035066. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3208035066 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
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|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B12 |
| Break-through voltage: |
414 V |
| Voltage for Gain 100 (T=+25°C): |
387.4 V |
| Dark current: |
23 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
137 |
| Position in Box: |
43 |
| EP1 batch: |
157 |
| EP1 batch after irradiation: |
10340 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
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|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 387.9442778 V T = -25 °C: 352.8750452 V |
| Voltage for Gain 150: |
T = +20 °C: 395.7413365 V T = -25 °C: 360.398773 V |
| Voltage for Gain 200: |
T = +20 °C: 400.0528164 V T = -25 °C: 364.6451058 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.663023641 V-1 T = -25 °C: 4.887816791 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.330194954 V-1 T = -25 °C: 8.900799872 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.70853549 V-1 T = -25 °C: 15.00926573 V-1 |
| Break-through voltage: |
T = +20 °C: 415.2946265 V T = -25 °C: 377.8347297 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
