Show Hamamatsu Avalanche Photo Diode 3208035062
This is all the information about APD 3208035062. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3208035062 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0816008410/3208035062 |
| Unit: |
#2880 (barcode 1309030873) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C11 |
| Break-through voltage: |
410 V |
| Voltage for Gain 100 (T=+25°C): |
381.3 V |
| Dark current: |
21 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
137 |
| Position in Box: |
41 |
| EP1 batch: |
157 |
| EP1 batch after irradiation: |
10340 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 381.6941364 V T = -25 °C: 346.2821272 V |
| Voltage for Gain 150: |
T = +20 °C: 389.525475 V T = -25 °C: 353.623739 V |
| Voltage for Gain 200: |
T = +20 °C: 393.8572758 V T = -25 °C: 357.7321138 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.713383923 V-1 T = -25 °C: 4.856037086 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.396970324 V-1 T = -25 °C: 9.888399215 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.79275202 V-1 T = -25 °C: 15.7859164 V-1 |
| Break-through voltage: |
T = +20 °C: 408.7457724 V T = -25 °C: 372.3728287 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history