Show Hamamatsu Avalanche Photo Diode 3207035008
This is all the information about APD 3207035008. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3207035008 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
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|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E07 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
383 V |
| Dark current: |
15.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
137 |
| Position in Box: |
3 |
| EP1 batch: |
156 |
| EP1 batch after irradiation: |
10338 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.5396243 V T = -25 °C: 347.1389485 V |
| Voltage for Gain 150: |
T = +20 °C: 390.4059957 V T = -25 °C: 354.4558231 V |
| Voltage for Gain 200: |
T = +20 °C: 394.7751229 V T = -25 °C: 358.5669437 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.444172018 V-1 T = -25 °C: 4.934615509 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.661994368 V-1 T = -25 °C: 9.117834031 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.91506992 V-1 T = -25 °C: 16.40346096 V-1 |
| Break-through voltage: |
T = +20 °C: 409.9746275 V T = -25 °C: 373.4177959 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
