Show Hamamatsu Avalanche Photo Diode 3116034736
This is all the information about APD 3116034736. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3116034736 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E04 |
| Break-through voltage: |
406 V |
| Voltage for Gain 100 (T=+25°C): |
378.2 V |
| Dark current: |
13.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
132 |
| Position in Box: |
15 |
| EP1 batch: |
149 |
| EP1 batch after irradiation: |
10337 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 377.9532892 V T = -25 °C: 343.1314608 V |
| Voltage for Gain 150: |
T = +20 °C: 385.7508172 V T = -25 °C: 350.3633213 V |
| Voltage for Gain 200: |
T = +20 °C: 390.0884672 V T = -25 °C: 354.4282664 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.658539833 V-1 T = -25 °C: 4.978145056 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.229703165 V-1 T = -25 °C: 9.302804931 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.42082855 V-1 T = -25 °C: 16.74619636 V-1 |
| Break-through voltage: |
T = +20 °C: 405.517977 V T = -25 °C: 369.4021293 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
