Show Hamamatsu Avalanche Photo Diode 3111034526
This is all the information about APD 3111034526. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3111034526 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E13 |
| Break-through voltage: |
403 V |
| Voltage for Gain 100 (T=+25°C): |
375.2 V |
| Dark current: |
21.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
433 |
| Position in Box: |
6 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10661 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 375.3453643 V T = -25 °C: 340.7598856 V |
| Voltage for Gain 150: |
T = +20 °C: 383.1774175 V T = -25 °C: 347.9845086 V |
| Voltage for Gain 200: |
T = +20 °C: 387.5573178 V T = -25 °C: 352.0835495 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.509456932 V-1 T = -25 °C: 5.161813007 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.806957347 V-1 T = -25 °C: 9.66032332 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.31925002 V-1 T = -25 °C: 15.15195277 V-1 |
| Break-through voltage: |
T = +20 °C: 402.1204723 V T = -25 °C: 366.8209832 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
