Show Hamamatsu Avalanche Photo Diode 0806007599
This is all the information about APD 0806007599. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0806007599 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 2505027971/0806007599 |
Unit: |
#3515 (barcode 1309040087) |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
red |
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Manufacturer information: |
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Wafer position: |
E06 |
Break-through voltage: |
413 V |
Voltage for Gain 100 (T=+25°C): |
383.8 V |
Dark current: |
2.8 nA |
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Screening Logistics: |
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Available: |
No |
Storage Box: |
297 |
Position in Box: |
36 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10363 |
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Shipment: |
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Grid number: |
86 |
Position in grid: |
1 |
Arrival for irradiation: |
03. Aug 2017 |
Sent for analysis after irradiation: |
17. Aug 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
09. Aug 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
3 |
Bias voltage: |
383.8 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 383.8348249 V T = -25 °C: 348.4771596 V |
Voltage for Gain 150: |
T = +20 °C: 391.7654541 V T = -25 °C: 355.8552451 V |
Voltage for Gain 200: |
T = +20 °C: 396.1715734 V T = -25 °C: 359.98959 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.596136008 V-1 T = -25 °C: 4.769283642 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.043189399 V-1 T = -25 °C: 9.590358892 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.0928411 V-1 T = -25 °C: 15.28135521 V-1 |
Break-through voltage: |
T = +20 °C: 412.2408728 V T = -25 °C: 375.7259136 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history