Show Hamamatsu Avalanche Photo Diode 0805007596
This is all the information about APD 0805007596. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0805007596 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0816008444/0805007596 |
| Unit: |
#2617 (barcode 1309029518) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D11 |
| Break-through voltage: |
418 V |
| Voltage for Gain 100 (T=+25°C): |
389 V |
| Dark current: |
3.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
297 |
| Position in Box: |
34 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10363 |
| |
|
| Shipment: |
|
| Grid number: |
86 |
| Position in grid: |
14 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
17. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
389 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 389.2884401 V T = -25 °C: 353.1726668 V |
| Voltage for Gain 150: |
T = +20 °C: 397.2153207 V T = -25 °C: 360.7044895 V |
| Voltage for Gain 200: |
T = +20 °C: 401.606557 V T = -25 °C: 364.9271615 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.459949039 V-1 T = -25 °C: 4.748565971 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.650551046 V-1 T = -25 °C: 9.526389111 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.00799948 V-1 T = -25 °C: 14.99263569 V-1 |
| Break-through voltage: |
T = +20 °C: 417.389484 V T = -25 °C: 380.7570979 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
