Show Hamamatsu Avalanche Photo Diode 3105034179
This is all the information about APD 3105034179. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
3105034179 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
H08 |
Break-through voltage: |
414 V |
Voltage for Gain 100 (T=+25°C): |
386.8 V |
Dark current: |
22.6 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
124 |
Position in Box: |
9 |
EP1 batch: |
136 |
EP1 batch after irradiation: |
10470 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 386.150662 V T = -25 °C: 350.4386091 V |
Voltage for Gain 150: |
T = +20 °C: 394.0053629 V T = -25 °C: 357.9048862 V |
Voltage for Gain 200: |
T = +20 °C: 398.3785694 V T = -25 °C: 362.1168567 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.555367902 V-1 T = -25 °C: 4.694040376 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.992580363 V-1 T = -25 °C: 9.465287014 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.95669171 V-1 T = -25 °C: 14.83576117 V-1 |
Break-through voltage: |
T = +20 °C: 413.0971554 V T = -25 °C: 377.0451266 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history