Show Hamamatsu Avalanche Photo Diode 0805007591
This is all the information about APD 0805007591. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0805007591 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C11 |
Break-through voltage: |
417 V |
Voltage for Gain 100 (T=+25°C): |
388.8 V |
Dark current: |
3.6 nA |
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Screening Logistics: |
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Available: |
No |
Storage Box: |
297 |
Position in Box: |
30 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10363 |
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Shipment: |
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Grid number: |
86 |
Position in grid: |
4 |
Arrival for irradiation: |
03. Aug 2017 |
Sent for analysis after irradiation: |
17. Aug 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
09. Aug 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
3 |
Bias voltage: |
388.8 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 389.0354187 V T = -25 °C: 352.9461573 V |
Voltage for Gain 150: |
T = +20 °C: 396.9179847 V T = -25 °C: 360.4569858 V |
Voltage for Gain 200: |
T = +20 °C: 401.2992298 V T = -25 °C: 364.6685994 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.569375524 V-1 T = -25 °C: 4.869108199 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.058522183 V-1 T = -25 °C: 8.939935322 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.06196096 V-1 T = -25 °C: 15.77724435 V-1 |
Break-through voltage: |
T = +20 °C: 416.7529251 V T = -25 °C: 380.2839095 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history