Show Hamamatsu Avalanche Photo Diode 3103033999
This is all the information about APD 3103033999. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3103033999 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C02 |
| Break-through voltage: |
417 V |
| Voltage for Gain 100 (T=+25°C): |
389.2 V |
| Dark current: |
19.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
121 |
| Position in Box: |
33 |
| EP1 batch: |
131 |
| EP1 batch after irradiation: |
10402 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 389.3767396 V T = -25 °C: 353.545286 V |
| Voltage for Gain 150: |
T = +20 °C: 397.2088598 V T = -25 °C: 361.0414006 V |
| Voltage for Gain 200: |
T = +20 °C: 401.558167 V T = -25 °C: 365.2605923 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.499187161 V-1 T = -25 °C: 4.673404753 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.867001796 V-1 T = -25 °C: 9.310646261 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.55387501 V-1 T = -25 °C: 14.60987061 V-1 |
| Break-through voltage: |
T = +20 °C: 416.5895285 V T = -25 °C: 380.3686023 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
