Show Hamamatsu Avalanche Photo Diode 3103033982
This is all the information about APD 3103033982. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
3103033982 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 3402036524/3103033982 |
Unit: |
#2341 (barcode 1309029310) |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
red |
|
|
Manufacturer information: |
|
Wafer position: |
G10 |
Break-through voltage: |
410 V |
Voltage for Gain 100 (T=+25°C): |
383.6 V |
Dark current: |
18.5 nA |
|
|
Screening Logistics: |
|
Available: |
No |
Storage Box: |
121 |
Position in Box: |
20 |
EP1 batch: |
131 |
EP1 batch after irradiation: |
10401 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 383.0074347 V T = -25 °C: 347.6602328 V |
Voltage for Gain 150: |
T = +20 °C: 390.8393892 V T = -25 °C: 355.0174915 V |
Voltage for Gain 200: |
T = +20 °C: 395.2000253 V T = -25 °C: 359.1530544 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.607070186 V-1 T = -25 °C: 4.706209975 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.097957104 V-1 T = -25 °C: 9.478386721 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.17936281 V-1 T = -25 °C: 14.96461444 V-1 |
Break-through voltage: |
T = +20 °C: 409.8869814 V T = -25 °C: 373.7322618 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history