Show Hamamatsu Avalanche Photo Diode 3102033899
This is all the information about APD 3102033899. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
3102033899 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E04 |
| Break-through voltage: |
404 V |
| Voltage for Gain 100 (T=+25°C): |
375.9 V |
| Dark current: |
12 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
120 |
| Position in Box: |
31 |
| EP1 batch: |
130 |
| EP1 batch after irradiation: |
10467 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 375.9079668 V T = -25 °C: 341.2111764 V |
| Voltage for Gain 150: |
T = +20 °C: 383.6567964 V T = -25 °C: 348.3856402 V |
| Voltage for Gain 200: |
T = +20 °C: 387.9640499 V T = -25 °C: 352.39849 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.699511179 V-1 T = -25 °C: 4.88586645 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.344382677 V-1 T = -25 °C: 9.320901801 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.55910863 V-1 T = -25 °C: 16.99389259 V-1 |
| Break-through voltage: |
T = +20 °C: 403.4642896 V T = -25 °C: 367.294741 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
