Show Hamamatsu Avalanche Photo Diode 3101033842
This is all the information about APD 3101033842. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
3101033842 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E09 |
Break-through voltage: |
409 V |
Voltage for Gain 100 (T=+25°C): |
381.1 V |
Dark current: |
22.7 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
119 |
Position in Box: |
47 |
EP1 batch: |
129 |
EP1 batch after irradiation: |
10466 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
21. Sep 2018 |
Sent for analysis after irradiation: |
02. Oct 2018 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
27. Sep 2018 |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
28. Sep 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 380.9076406 V T = -25 °C: 345.5698388 V |
Voltage for Gain 150: |
T = +20 °C: 388.7455005 V T = -25 °C: 352.835488 V |
Voltage for Gain 200: |
T = +20 °C: 393.1100631 V T = -25 °C: 356.9145633 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.630429897 V-1 T = -25 °C: 4.78803734 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.188739456 V-1 T = -25 °C: 9.757552764 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.27953524 V-1 T = -25 °C: 15.55269939 V-1 |
Break-through voltage: |
T = +20 °C: 408.5186556 V T = -25 °C: 371.8924307 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history