Show Hamamatsu Avalanche Photo Diode 3009033776
This is all the information about APD 3009033776. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
3009033776 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D06 |
Break-through voltage: |
414 V |
Voltage for Gain 100 (T=+25°C): |
384.9 V |
Dark current: |
15.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
119 |
Position in Box: |
8 |
EP1 batch: |
127 |
EP1 batch after irradiation: |
10465 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
24. Jul 2018 |
Sent for analysis after irradiation: |
21. Aug 2018 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
16. Aug 2018 |
Dose used: |
30 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
17. Aug 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 385.2703201 V T = -25 °C: 349.4600027 V |
Voltage for Gain 150: |
T = +20 °C: 393.0940327 V T = -25 °C: 356.8329101 V |
Voltage for Gain 200: |
T = +20 °C: 397.4502774 V T = -25 °C: 360.9775589 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.509183273 V-1 T = -25 °C: 4.73468877 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.864517437 V-1 T = -25 °C: 9.602133569 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.60184176 V-1 T = -25 °C: 15.26246606 V-1 |
Break-through voltage: |
T = +20 °C: 413.1354008 V T = -25 °C: 376.4033026 V |
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Notes: |
foam
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history