Show Hamamatsu Avalanche Photo Diode 3008033703
This is all the information about APD 3008033703. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
3008033703 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
C04 |
Break-through voltage: |
419 V |
Voltage for Gain 100 (T=+25°C): |
390.7 V |
Dark current: |
13.6 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
117 |
Position in Box: |
48 |
EP1 batch: |
125 |
EP1 batch after irradiation: |
10669 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 390.9944529 V T = -25 °C: 354.8957112 V |
Voltage for Gain 150: |
T = +20 °C: 398.809286 V T = -25 °C: 362.3885984 V |
Voltage for Gain 200: |
T = +20 °C: 403.1348797 V T = -25 °C: 366.6043675 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.57800881 V-1 T = -25 °C: 4.960691031 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.157342799 V-1 T = -25 °C: 9.062793056 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.28554482 V-1 T = -25 °C: 15.57399189 V-1 |
Break-through voltage: |
T = +20 °C: 418.5248028 V T = -25 °C: 382.0820307 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history