Show Hamamatsu Avalanche Photo Diode 3008033695
This is all the information about APD 3008033695. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
3008033695 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E06 |
Break-through voltage: |
414 V |
Voltage for Gain 100 (T=+25°C): |
386.2 V |
Dark current: |
23.2 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
117 |
Position in Box: |
41 |
EP1 batch: |
125 |
EP1 batch after irradiation: |
10669 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 386.047621 V T = -25 °C: 350.2761653 V |
Voltage for Gain 150: |
T = +20 °C: 393.8851551 V T = -25 °C: 357.6614781 V |
Voltage for Gain 200: |
T = +20 °C: 398.2261452 V T = -25 °C: 361.7788533 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.591693162 V-1 T = -25 °C: 4.753371256 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.184525941 V-1 T = -25 °C: 9.902371278 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.24033888 V-1 T = -25 °C: 15.96035047 V-1 |
Break-through voltage: |
T = +20 °C: 414.3861574 V T = -25 °C: 376.7277273 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history