Show Hamamatsu Avalanche Photo Diode 3007033666
This is all the information about APD 3007033666. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
3007033666 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D06 |
Break-through voltage: |
409 V |
Voltage for Gain 100 (T=+25°C): |
380.7 V |
Dark current: |
22.4 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
117 |
Position in Box: |
23 |
EP1 batch: |
125 |
EP1 batch after irradiation: |
10668 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 380.5387909 V T = -25 °C: 345.2811982 V |
Voltage for Gain 150: |
T = +20 °C: 388.3615359 V T = -25 °C: 352.6259888 V |
Voltage for Gain 200: |
T = +20 °C: 392.7169978 V T = -25 °C: 356.7321481 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.467996978 V-1 T = -25 °C: 4.85169377 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.659080103 V-1 T = -25 °C: 9.912880858 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.95368142 V-1 T = -25 °C: 15.75851504 V-1 |
Break-through voltage: |
T = +20 °C: 408.4279226 V T = -25 °C: 372.0211776 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history