Show Hamamatsu Avalanche Photo Diode 3002033302
This is all the information about APD 3002033302. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
3002033302 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F05 |
Break-through voltage: |
416 V |
Voltage for Gain 100 (T=+25°C): |
389 V |
Dark current: |
22.1 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
112 |
Position in Box: |
19 |
EP1 batch: |
117 |
EP1 batch after irradiation: |
10268 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 388.6804887 V T = -25 °C: 352.759501 V |
Voltage for Gain 150: |
T = +20 °C: 396.4498982 V T = -25 °C: 360.3764744 V |
Voltage for Gain 200: |
T = +20 °C: 400.7434925 V T = -25 °C: 364.5867987 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.42320542 V-1 T = -25 °C: 4.906974053 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.722031382 V-1 T = -25 °C: 9.08735216 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.25045772 V-1 T = -25 °C: 15.17453085 V-1 |
Break-through voltage: |
T = +20 °C: 416.7723403 V T = -25 °C: 379.0195085 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history