Show Hamamatsu Avalanche Photo Diode 2901032498
This is all the information about APD 2901032498. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2901032498 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
A07 |
Break-through voltage: |
414 V |
Voltage for Gain 100 (T=+25°C): |
388.5 V |
Dark current: |
5.9 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
101 |
Position in Box: |
47 |
EP1 batch: |
99 |
EP1 batch after irradiation: |
10451 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 388.6723231 V T = -25 °C: 352.8014494 V |
Voltage for Gain 150: |
T = +20 °C: 396.5411679 V T = -25 °C: 360.4632187 V |
Voltage for Gain 200: |
T = +20 °C: 400.8952042 V T = -25 °C: 364.6933513 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.372640378 V-1 T = -25 °C: 4.549798312 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.526982689 V-1 T = -25 °C: 8.494088445 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.83261751 V-1 T = -25 °C: 15.83694439 V-1 |
Break-through voltage: |
T = +20 °C: 416.1053966 V T = -25 °C: 380.2323755 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history