Show Hamamatsu Avalanche Photo Diode 2901032464
This is all the information about APD 2901032464. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2901032464 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H09 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
381.9 V |
| Dark current: |
7.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
44 |
| Position in Box: |
10 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10071 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
24. Jul 2018 |
| Sent for analysis after irradiation: |
21. Aug 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Aug 2018 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Aug 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 381.9787065 V T = -25 °C: 346.7658077 V |
| Voltage for Gain 150: |
T = +20 °C: 389.8478559 V T = -25 °C: 354.0781163 V |
| Voltage for Gain 200: |
T = +20 °C: 394.1960753 V T = -25 °C: 358.2493572 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.229915796 V-1 T = -25 °C: 4.982284681 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.35967953 V-1 T = -25 °C: 9.743448755 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.18761494 V-1 T = -25 °C: 15.97737407 V-1 |
| Break-through voltage: |
T = +20 °C: 408.1185374 V T = -25 °C: 373.6674306 V |
| |
|
| Notes: |
foam
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
