Show Hamamatsu Avalanche Photo Diode 2901032462
This is all the information about APD 2901032462. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2901032462 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2412026839/2901032462 |
| Unit: |
#3818 (barcode 1309040230) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G08 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
381.5 V |
| Dark current: |
7.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
44 |
| Position in Box: |
8 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10071 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
24. Jul 2018 |
| Sent for analysis after irradiation: |
21. Aug 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Aug 2018 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Aug 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 381.1710848 V T = -25 °C: 345.873938 V |
| Voltage for Gain 150: |
T = +20 °C: 388.9734784 V T = -25 °C: 353.2774466 V |
| Voltage for Gain 200: |
T = +20 °C: 393.3837806 V T = -25 °C: 357.4502393 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.658043187 V-1 T = -25 °C: 4.303843842 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.875517668 V-1 T = -25 °C: 9.199714709 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 16.75916121 V-1 T = -25 °C: 17.85168405 V-1 |
| Break-through voltage: |
T = +20 °C: 408.2838903 V T = -25 °C: 372.3613669 V |
| |
|
| Notes: |
foam
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
