Show Hamamatsu Avalanche Photo Diode 2820032378
This is all the information about APD 2820032378. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2820032378 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A06 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
382.8 V |
| Dark current: |
5.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
100 |
| Position in Box: |
4 |
| EP1 batch: |
96 |
| EP1 batch after irradiation: |
10449 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.0086894 V T = -25 °C: 347.6293872 V |
| Voltage for Gain 150: |
T = +20 °C: 390.9154045 V T = -25 °C: 355.0932534 V |
| Voltage for Gain 200: |
T = +20 °C: 395.3245895 V T = -25 °C: 359.3525656 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.56196262 V-1 T = -25 °C: 4.751778493 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.952773253 V-1 T = -25 °C: 9.356683484 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.91798501 V-1 T = -25 °C: 12.32704124 V-1 |
| Break-through voltage: |
T = +20 °C: 408.301244 V T = -25 °C: 374.5799752 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
