Show Hamamatsu Avalanche Photo Diode 2908032989
This is all the information about APD 2908032989. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2908032989 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2908032989/2004021764 |
| Unit: |
#2289 (barcode 1309024797) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D10 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
379.9 V |
| Dark current: |
10.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
106 |
| Position in Box: |
26 |
| EP1 batch: |
107 |
| EP1 batch after irradiation: |
10397 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 380.3018859 V T = -25 °C: 344.2498567 V |
| Voltage for Gain 150: |
T = +20 °C: 388.0309054 V T = -25 °C: 351.6445556 V |
| Voltage for Gain 200: |
T = +20 °C: 392.3546377 V T = -25 °C: 355.7783539 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 5.024618855 V-1 T = -25 °C: 4.831573463 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.125962161 V-1 T = -25 °C: 9.857955895 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.87236953 V-1 T = -25 °C: 15.79887121 V-1 |
| Break-through voltage: |
T = +20 °C: 407.8142019 V T = -25 °C: 371.2879562 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history