Show Hamamatsu Avalanche Photo Diode 2905032808
This is all the information about APD 2905032808. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2905032808 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 3408037016/2905032808 |
| Unit: |
#3571 (barcode 1309029778) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F04 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
383.3 V |
| Dark current: |
5.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
103 |
| Position in Box: |
50 |
| EP1 batch: |
102 |
| EP1 batch after irradiation: |
10393 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.5798667 V T = -25 °C: 346.7321498 V |
| Voltage for Gain 150: |
T = +20 °C: 390.3334573 V T = -25 °C: 354.1370358 V |
| Voltage for Gain 200: |
T = +20 °C: 394.6313198 V T = -25 °C: 358.2948509 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.450934108 V-1 T = -25 °C: 5.002526215 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.753175445 V-1 T = -25 °C: 9.283126125 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.39802903 V-1 T = -25 °C: 14.62861838 V-1 |
| Break-through voltage: |
T = +20 °C: 409.3468664 V T = -25 °C: 373.4693425 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history