Show Hamamatsu Avalanche Photo Diode 2904032744
This is all the information about APD 2904032744. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2904032744 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E13 |
| Break-through voltage: |
416 V |
| Voltage for Gain 100 (T=+25°C): |
388 V |
| Dark current: |
12.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
98 |
| Position in Box: |
41 |
| EP1 batch: |
94 |
| EP1 batch after irradiation: |
10447 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 388.4916808 V T = -25 °C: 352.3853858 V |
| Voltage for Gain 150: |
T = +20 °C: 396.3344121 V T = -25 °C: 359.8820937 V |
| Voltage for Gain 200: |
T = +20 °C: 400.6778319 V T = -25 °C: 364.0788841 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.43871237 V-1 T = -25 °C: 4.686778598 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.680095291 V-1 T = -25 °C: 9.466599476 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.16846873 V-1 T = -25 °C: 14.89528855 V-1 |
| Break-through voltage: |
T = +20 °C: 415.8261639 V T = -25 °C: 379.2857968 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
