Show Hamamatsu Avalanche Photo Diode 2810031592
This is all the information about APD 2810031592. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2810031592 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F05 |
| Break-through voltage: |
406 V |
| Voltage for Gain 100 (T=+25°C): |
377.4 V |
| Dark current: |
6.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
90 |
| Position in Box: |
21 |
| EP1 batch: |
81 |
| EP1 batch after irradiation: |
10440 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 377.0092109 V T = -25 °C: 342.2678544 V |
| Voltage for Gain 150: |
T = +20 °C: 384.8254545 V T = -25 °C: 349.5922564 V |
| Voltage for Gain 200: |
T = +20 °C: 389.188553 V T = -25 °C: 353.6913018 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.64458388 V-1 T = -25 °C: 4.865593528 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.172482873 V-1 T = -25 °C: 9.989392172 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.2561642 V-1 T = -25 °C: 16.05264874 V-1 |
| Break-through voltage: |
T = +20 °C: 405.172173 V T = -25 °C: 369.187721 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
