Show Hamamatsu Avalanche Photo Diode 2810031554
This is all the information about APD 2810031554. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2810031554 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B12 |
| Break-through voltage: |
415 V |
| Voltage for Gain 100 (T=+25°C): |
388.1 V |
| Dark current: |
13 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
89 |
| Position in Box: |
42 |
| EP1 batch: |
79 |
| EP1 batch after irradiation: |
10196 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
26. Aug 2019 |
| Sent for analysis after irradiation: |
02. Sep 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
28. Aug 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
31. Aug 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 388.6015147 V T = -25 °C: 352.5825925 V |
| Voltage for Gain 150: |
T = +20 °C: 396.4259923 V T = -25 °C: 360.0600048 V |
| Voltage for Gain 200: |
T = +20 °C: 400.7454609 V T = -25 °C: 364.2439292 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.407259486 V-1 T = -25 °C: 4.627969464 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.617971815 V-1 T = -25 °C: 9.34349393 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.17653253 V-1 T = -25 °C: 14.75980371 V-1 |
| Break-through voltage: |
T = +20 °C: 413.924611 V T = -25 °C: 377.7825923 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
