Show Hamamatsu Avalanche Photo Diode 2810031546
This is all the information about APD 2810031546. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2810031546 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E15 |
Break-through voltage: |
407 V |
Voltage for Gain 100 (T=+25°C): |
382.3 V |
Dark current: |
12.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
89 |
Position in Box: |
34 |
EP1 batch: |
79 |
EP1 batch after irradiation: |
10195 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
26. Aug 2019 |
Sent for analysis after irradiation: |
02. Sep 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
28. Aug 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
31. Aug 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 381.7548877 V T = -25 °C: 346.3130202 V |
Voltage for Gain 150: |
T = +20 °C: 389.6049296 V T = -25 °C: 353.7384511 V |
Voltage for Gain 200: |
T = +20 °C: 393.9397903 V T = -25 °C: 357.8812678 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.685331906 V-1 T = -25 °C: 4.773126502 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.387347237 V-1 T = -25 °C: 9.781952555 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.75007999 V-1 T = -25 °C: 15.53121169 V-1 |
Break-through voltage: |
T = +20 °C: 406.7451906 V T = -25 °C: 371.2237617 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history