Show Hamamatsu Avalanche Photo Diode 2806031245
This is all the information about APD 2806031245. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2806031245 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D06 |
| Break-through voltage: |
406 V |
| Voltage for Gain 100 (T=+25°C): |
377.7 V |
| Dark current: |
7.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
44 |
| Position in Box: |
19 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10072 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
24. Jul 2018 |
| Sent for analysis after irradiation: |
21. Aug 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Aug 2018 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Aug 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.2837875 V T = -25 °C: 343.051094 V |
| Voltage for Gain 150: |
T = +20 °C: 386.1121292 V T = -25 °C: 350.4100125 V |
| Voltage for Gain 200: |
T = +20 °C: 390.4857061 V T = -25 °C: 354.5410296 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.44692921 V-1 T = -25 °C: 4.798481924 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.275828815 V-1 T = -25 °C: 9.59444322 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.21643781 V-1 T = -25 °C: 14.84386499 V-1 |
| Break-through voltage: |
T = +20 °C: 405.7639285 V T = -25 °C: 369.4249759 V |
| |
|
| Notes: |
foam
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
