Show Hamamatsu Avalanche Photo Diode 2805031170
This is all the information about APD 2805031170. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2805031170 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2304024441/2805031170 |
| Unit: |
#2872 (barcode 1309030798) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B11 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
381.1 V |
| Dark current: |
6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
86 |
| Position in Box: |
22 |
| EP1 batch: |
74 |
| EP1 batch after irradiation: |
10191 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
26. Aug 2019 |
| Sent for analysis after irradiation: |
02. Sep 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
28. Aug 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
31. Aug 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 381.5599141 V T = -25 °C: 346.1891513 V |
| Voltage for Gain 150: |
T = +20 °C: 389.3701833 V T = -25 °C: 353.5719534 V |
| Voltage for Gain 200: |
T = +20 °C: 393.7098833 V T = -25 °C: 357.6998547 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.498690183 V-1 T = -25 °C: 4.877676979 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.822592311 V-1 T = -25 °C: 9.105612811 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.48378415 V-1 T = -25 °C: 16.26493553 V-1 |
| Break-through voltage: |
T = +20 °C: 408.2556697 V T = -25 °C: 371.8926183 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
