Show Hamamatsu Avalanche Photo Diode 2801030859
This is all the information about APD 2801030859. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2801030859 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E13 |
| Break-through voltage: |
405 V |
| Voltage for Gain 100 (T=+25°C): |
376.9 V |
| Dark current: |
10.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
83 |
| Position in Box: |
49 |
| EP1 batch: |
71 |
| EP1 batch after irradiation: |
10187 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
26. Aug 2019 |
| Sent for analysis after irradiation: |
02. Sep 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
28. Aug 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
31. Aug 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 376.8661313 V T = -25 °C: 341.9798609 V |
| Voltage for Gain 150: |
T = +20 °C: 384.672047 V T = -25 °C: 349.2760591 V |
| Voltage for Gain 200: |
T = +20 °C: 389.0225807 V T = -25 °C: 353.3746475 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.667776849 V-1 T = -25 °C: 4.990410616 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.276704017 V-1 T = -25 °C: 9.287909701 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.40672923 V-1 T = -25 °C: 16.6648199 V-1 |
| Break-through voltage: |
T = +20 °C: 404.5003684 V T = -25 °C: 368.1497845 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
