Show Hamamatsu Avalanche Photo Diode 2801030855
This is all the information about APD 2801030855. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2801030855 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D04 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
385.3 V |
| Dark current: |
4.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
83 |
| Position in Box: |
46 |
| EP1 batch: |
70 |
| EP1 batch after irradiation: |
10187 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
26. Aug 2019 |
| Sent for analysis after irradiation: |
02. Sep 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
28. Aug 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
31. Aug 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 385.4897053 V T = -25 °C: 349.9217821 V |
| Voltage for Gain 150: |
T = +20 °C: 393.3142175 V T = -25 °C: 357.3260596 V |
| Voltage for Gain 200: |
T = +20 °C: 397.6630646 V T = -25 °C: 361.4747556 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.46249114 V-1 T = -25 °C: 4.932504628 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.776584835 V-1 T = -25 °C: 9.197153812 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.38054212 V-1 T = -25 °C: 16.51361844 V-1 |
| Break-through voltage: |
T = +20 °C: 412.8123584 V T = -25 °C: 376.2871402 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
