Show Hamamatsu Avalanche Photo Diode 2710030799
This is all the information about APD 2710030799. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2710030799 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2308024807/2710030799 |
| Unit: |
#3123 (barcode 1309034154) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B10 |
| Break-through voltage: |
414 V |
| Voltage for Gain 100 (T=+25°C): |
385.7 V |
| Dark current: |
14.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
83 |
| Position in Box: |
12 |
| EP1 batch: |
69 |
| EP1 batch after irradiation: |
10185 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
26. Aug 2019 |
| Sent for analysis after irradiation: |
02. Sep 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
28. Aug 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
31. Aug 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 385.7857861 V T = -25 °C: 350.190196 V |
| Voltage for Gain 150: |
T = +20 °C: 393.6318057 V T = -25 °C: 357.6900448 V |
| Voltage for Gain 200: |
T = +20 °C: 397.9773803 V T = -25 °C: 361.8763641 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.686700536 V-1 T = -25 °C: 4.780141037 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.320027689 V-1 T = -25 °C: 9.638252693 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.56504923 V-1 T = -25 °C: 15.2859244 V-1 |
| Break-through voltage: |
T = +20 °C: 413.2980522 V T = -25 °C: 377.0778347 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
