Show Hamamatsu Avalanche Photo Diode 2710030770
This is all the information about APD 2710030770. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2710030770 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0901009074/2710030770 |
| Unit: |
#1898 (barcode 1309022168) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D15 |
| Break-through voltage: |
413 V |
| Voltage for Gain 100 (T=+25°C): |
384.4 V |
| Dark current: |
18 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
82 |
| Position in Box: |
35 |
| EP1 batch: |
68 |
| EP1 batch after irradiation: |
10185 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
26. Aug 2019 |
| Sent for analysis after irradiation: |
02. Sep 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
28. Aug 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
31. Aug 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 384.3548456 V T = -25 °C: 348.7238916 V |
| Voltage for Gain 150: |
T = +20 °C: 392.2641618 V T = -25 °C: 356.1699261 V |
| Voltage for Gain 200: |
T = +20 °C: 396.6591343 V T = -25 °C: 360.363389 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.482116862 V-1 T = -25 °C: 5.001214726 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.720533747 V-1 T = -25 °C: 9.265856877 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.15881575 V-1 T = -25 °C: 14.57108804 V-1 |
| Break-through voltage: |
T = +20 °C: 411.9829164 V T = -25 °C: 375.6171184 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
