Show Hamamatsu Avalanche Photo Diode 2710030750
This is all the information about APD 2710030750. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2710030750 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 2710030750/2314025374 |
Unit: |
#3259 (barcode 1309036004) |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
blue |
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Manufacturer information: |
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Wafer position: |
D09 |
Break-through voltage: |
410 V |
Voltage for Gain 100 (T=+25°C): |
381.3 V |
Dark current: |
15.6 nA |
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Screening Logistics: |
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Available: |
No |
Storage Box: |
82 |
Position in Box: |
13 |
EP1 batch: |
68 |
EP1 batch after irradiation: |
10184 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
26. Aug 2019 |
Sent for analysis after irradiation: |
02. Sep 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
28. Aug 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
31. Aug 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 381.7182106 V T = -25 °C: 346.7131289 V |
Voltage for Gain 150: |
T = +20 °C: 389.6384261 V T = -25 °C: 354.0080954 V |
Voltage for Gain 200: |
T = +20 °C: 394.0474369 V T = -25 °C: 358.0973248 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.678848899 V-1 T = -25 °C: 5.074056764 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.145234227 V-1 T = -25 °C: 9.492461825 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.15545452 V-1 T = -25 °C: 15.19978677 V-1 |
Break-through voltage: |
T = +20 °C: 408.7692108 V T = -25 °C: 372.2172158 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history