Show Hamamatsu Avalanche Photo Diode 2708030599
This is all the information about APD 2708030599. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
2708030599 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
B08 |
Break-through voltage: |
410 V |
Voltage for Gain 100 (T=+25°C): |
382.5 V |
Dark current: |
12.2 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
80 |
Position in Box: |
17 |
EP1 batch: |
65 |
EP1 batch after irradiation: |
10181 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
26. Aug 2019 |
Sent for analysis after irradiation: |
02. Sep 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
28. Aug 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
31. Aug 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 383.1689967 V T = -25 °C: 347.6869224 V |
Voltage for Gain 150: |
T = +20 °C: 390.9948699 V T = -25 °C: 355.0660802 V |
Voltage for Gain 200: |
T = +20 °C: 395.3371215 V T = -25 °C: 359.1967638 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.578215349 V-1 T = -25 °C: 4.68528797 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.05770628 V-1 T = -25 °C: 9.463186276 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.19479882 V-1 T = -25 °C: 15.06503432 V-1 |
Break-through voltage: |
T = +20 °C: 409.1291712 V T = -25 °C: 372.9384344 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history