Show Hamamatsu Avalanche Photo Diode 2707030571
This is all the information about APD 2707030571. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
2707030571 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
E09 |
Break-through voltage: |
409 V |
Voltage for Gain 100 (T=+25°C): |
380 V |
Dark current: |
6.4 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
93 |
Position in Box: |
46 |
EP1 batch: |
64 |
EP1 batch after irradiation: |
10180 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
26. Aug 2019 |
Sent for analysis after irradiation: |
02. Sep 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
28. Aug 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
31. Aug 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 380.1560036 V T = -25 °C: 344.9188025 V |
Voltage for Gain 150: |
T = +20 °C: 388.0310803 V T = -25 °C: 352.3104488 V |
Voltage for Gain 200: |
T = +20 °C: 392.4415708 V T = -25 °C: 356.4544121 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.54022072 V-1 T = -25 °C: 4.997835215 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.818578349 V-1 T = -25 °C: 9.122260955 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.69277676 V-1 T = -25 °C: 16.38589684 V-1 |
Break-through voltage: |
T = +20 °C: 408.0994363 V T = -25 °C: 371.8082927 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history